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Proceedings Paper

Low-stress and high-reflectance Mo/Si multilayers for EUVL by magnetron sputtering deposition with bias assistance
Author(s): Bo Yu; Liping Wang; Hailiang Li; Yao Xie; Hui Wang; Haitao Zhang; Shun Yao; Yu Liu; Jie Yu; Chun Li; Changqing Xie; Chunshui Jin
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Paper Abstract

To explore the potential of achieving low-stress and high-reflectance Mo/Si multilayers deposited by conventional magnetron sputtering with bias assistance, we investigated the effects of varying Ar gas pressure, substrate bias voltage and bias-assisted Si ratio on the stress and EUV reflectance of Mo/Si multilayers. To reduce the damage of ion bombardments on Si-on-Mo interface, only final part of Si layer was deposited with bias assistance. Bias voltage has strong influence on the stress. The compressive stress of Mo/Si multilayers can be reduced remarkably by increasing bias voltage due to the increase of Mo-on-Si interdiffusion and postponement of Mo crystallization transition. Properly choosing gas pressure and bias-assisted Si ratio is critical to obtain high EUV reflectance. Appropriately decreasing gas pressure can reduce the interface roughness without increasing interdiffusion. Too much bias assistance can seriously reduce the optical contrast between Mo and Si layers and lead to a remarkable decrease of EUV reflectance. Thus, by appropriately choosing gas pressure, bias voltage and bias-assisted Si ratio, the stress values of Mo/Si multilayers can be reduced to the order of -100 MPa with an EUV reflectance loss of about 1%.

Paper Details

Date Published: 19 March 2018
PDF: 12 pages
Proc. SPIE 10583, Extreme Ultraviolet (EUV) Lithography IX, 105831T (19 March 2018); doi: 10.1117/12.2294479
Show Author Affiliations
Bo Yu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Liping Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hailiang Li, Institute of Microelectronics (China)
Yao Xie, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Hui Wang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Haitao Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Shun Yao, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Yu Liu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Jie Yu, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Chun Li, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Changqing Xie, Institute of Microelectronics (China)
Chunshui Jin, Changchun Institute of Optics, Fine Mechanics and Physics (China)


Published in SPIE Proceedings Vol. 10583:
Extreme Ultraviolet (EUV) Lithography IX
Kenneth A. Goldberg, Editor(s)

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