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Proceedings Paper

High-speed Pockels effect in strained silicon waveguide (Conference Presentation)
Author(s): Mathias Berciano; Guillaume Marcaud; Pedro Damas; Xavier Le Roux; Carlos Alonso-Ramos; Diego Pérez-Galacho; Vladyslav Vakarin; Paul Crozat; Daniel Benedikovic; Delphine Marris-Morini; Eric Cassan; Laurent Vivien

Paper Abstract

Silicon photonics is being considered as the future photonic platform for low power consumption optical communications. However, silicon is a centrosymmetric crystal, i.e. silicon doesn’t have Pockels effect. Nevertheless, breaking the crystal symmetry of silicon can be used to overcome this limitation. In this work, the crystal modification is achieved by depositing a SiN high-stress overlayer. Recent results on high-speed measurements will be presented and discussed. Both charge effects and Pockels effect induced under an electric field will be also analyzed.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10536, Smart Photonic and Optoelectronic Integrated Circuits XX, 105360H (14 March 2018); doi: 10.1117/12.2292550
Show Author Affiliations
Mathias Berciano, Ctr. de Nanosciences et de Nanotechnologies (France)
Guillaume Marcaud, Ctr. de Nanosciences et de Nanotechnologies (France)
Pedro Damas, Ctr. de Nanosciences et de Nanotechnologies (France)
Xavier Le Roux, Ctr. de Nanosciences et de Nanotechnologies (France)
Carlos Alonso-Ramos, Ctr. de Nanosciences et de Nanotechnologies (France)
Diego Pérez-Galacho, Ctr. de Nanosciences et de Nanotechnologies (France)
Vladyslav Vakarin, Ctr. de Nanosciences et de Nanotechnologies (France)
Paul Crozat, Ctr. de Nanosciences et de Nanotechnologies (France)
Daniel Benedikovic, Ctr. de Nanosciences et de Nanotechnologies (France)
Delphine Marris-Morini, Ctr. de Nanosciences et de Nanotechnologies (France)
Eric Cassan, Ctr. de Nanosciences et de Nanotechnologies (France)
Laurent Vivien, Ctr. de Nanosciences et de Nanotechnologies (France)


Published in SPIE Proceedings Vol. 10536:
Smart Photonic and Optoelectronic Integrated Circuits XX
Sailing He; El-Hang Lee, Editor(s)

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