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Proceedings Paper

Cryogenic-cooled Tm:SBN tunable laser
Author(s): Richard Švejkar; Jan Šulc; Michal Němec; Helena Jelínková; Maxim E. Doroshenko; Alexander G. Papashvili; Pavel A. Lykov; Liudmila I. Ivleva
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Paper Abstract

In this work the temperature dependence of spectroscopic and laser properties of new ac- tive medium Tm:SBN (Strontium-Barium Niobate, SrxBa1−xNb2O6, x = 0.61). The tested sample of Tm:SBN (2 wt. % of Tm2O3) appropriate for generation of laser radiation at 1.88 μm had plan-parallel polished faces without anti-reflection (thickness 6.65 mm). During spectroscopy and laser experiments the Tm:SBN was at- tached to temperature-controlled copper holder and was placed in a vacuum chamber. The transmission and emission spectra of Tm:SBN and the fluorescence decay time were measured depending on temperature range 80 - 350 K. The fluorescence decay time was measured to be 3.5 ms and 2.8 ms at 80 and 350 K, respectively. Longitudinal excitation of Tm:SBN was carried out by a fibre-coupled laser diode (pulse duration 10 ms, rep- etition rate 10 Hz, pump wavelength 793 nm). The laser resonator was hemispherical, 146 mm long, with flat pumping mirror (HR @1.8 - 2.1 μm) and spherical output coupler (r = 150 mm, R = 97.5 % @1.8 - 2.1 μm). The Tm:SBN laser properties were investigated at temperature range 80 - 300 K. The highest slope efficiency with respect to absorbed pumped power was 3 % at 80 K. The maximum output peak amplitude power was 0.12 W at 80 K, i.e. 3.2 times higher than it was measured at 200 K. Tunability of laser wavelength at 80 K in the range of 1827 - 1962 nm was obtained by using SiO2 birefringent filter. At 300 K, wavelength tunability reached 1859 - 1970 nm. Thus, the new Tm:SBN crystal can be an useful laser material in the region of 2 μm.

Paper Details

Date Published: 1 December 2017
PDF: 6 pages
Proc. SPIE 10603, Photonics, Devices, and Systems VII, 1060305 (1 December 2017); doi: 10.1117/12.2292425
Show Author Affiliations
Richard Švejkar, Czech Technical Univ. in Prague (Czech Republic)
Jan Šulc, Czech Technical Univ. in Prague (Czech Republic)
Michal Němec, Czech Technical Univ. in Prague (Czech Republic)
Helena Jelínková, Czech Technical Univ. in Prague (Czech Republic)
Maxim E. Doroshenko, A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences (Russian Federation)
Alexander G. Papashvili, A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences (Russian Federation)
Pavel A. Lykov, A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences (Russian Federation)
Liudmila I. Ivleva, A. M. Prokhorov General Physics Institute of the Russian Academy of Sciences (Russian Federation)


Published in SPIE Proceedings Vol. 10603:
Photonics, Devices, and Systems VII
Karel Fliegel; Petr Páta, Editor(s)

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