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Proceedings Paper

Understanding the origin of parasitic absorption in GaAs double heterostructures
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Paper Abstract

Despite achievements of extremely high external quantum efficiency (EQE), 99.5%, the net cooling of GaAs|GaInP double heterostructures (DHS) has been elusive. This is primarily due to the parasitic absorption, which originates from the GaInP passivation layers at long wavelengths. In samples with thin GaInP passivation layers, we report an EQE of 99%, approaching theoretical requirement for being heat neutral. Additionally, we investigate the EQE of MBE-grown GaAs|AlGaAs DHS versus temperature; the results compare well with that of GaAs|GaInP at and below 150 K. Also, initial measurements of parasitic absorption at shorter wavelengths is presented.

Paper Details

Date Published: 22 February 2018
PDF: 9 pages
Proc. SPIE 10550, Optical and Electronic Cooling of Solids III, 105500F (22 February 2018); doi: 10.1117/12.2292269
Show Author Affiliations
Nathan Giannini, Univ. of New Mexico (United States)
Zhou Yang, Univ. of New Mexico (United States)
Alexander R. Albrecht, Univ. of New Mexico (United States)
Mansoor Sheik-Bahae, Univ. of New Mexico (United States)

Published in SPIE Proceedings Vol. 10550:
Optical and Electronic Cooling of Solids III
Richard I. Epstein; Denis V. Seletskiy; Mansoor Sheik-Bahae, Editor(s)

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