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Proceedings Paper

Characteristics of AlN layer on four-inch sapphire substrate by high-temperature annealing in nitrogen atmosphere
Author(s): Akira Mishima; Yuji Tomita; Yoshiki Yano; Toshiya Tabuchi; Koh Matsumoto; Hideto Miyake
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Paper Abstract

In this study, we developed an annealing furnace for 4 inch wafers and used it to anneal AlN on a 4 inch c-plane sapphire substrate at 1700°C for 1 h in a pure N2 atmosphere by using the annealing furnace (STA1800, Taiyo Nippon Sanso). FWHM of the XRC of the (0002) of 48.6 arcsec, and that of the (10-12) of 278.2 arcsec was obtained.

Paper Details

Date Published: 23 February 2018
PDF: 5 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053204 (23 February 2018); doi: 10.1117/12.2292182
Show Author Affiliations
Akira Mishima, Taiyo Nippon Sanso Corp. (Japan)
Yuji Tomita, Taiyo Nippon Sanso Corp. (Japan)
Yoshiki Yano, Taiyo Nippon Sanso Corp. (Japan)
Toshiya Tabuchi, Taiyo Nippon Sanso Corp. (Japan)
Koh Matsumoto, Taiyo Nippon Sanso Corp. (Japan)
Hideto Miyake, Mie Univ. (Japan)

Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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