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Proceedings Paper

Multiphonon-assisted energy transfer between rare-earth 4f-shells and semiconductor hosts
Author(s): Akihito Taguchi; Kenichiro Takahei
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Paper Abstract

We have proposed an energy transfer model, which explains the experimentally observed electronic and optical properties of Yb-doped InP: the Yb 4f-shell is excited by recombination of an electron-hole pair at an electron trap, which is formed by Yb. Quenching of the 4f-shell luminescence at elevated temperatures is explained by the reverse of the excitation process. The energy transfer process requires an energy compensation mechanism, since there is an energy mismatch between the recombination energy of the electron-hole pair and the Yb 4f- shell energy. By assuming that the energy transfer is assisted by a nonradiative multiphonon transition process, the optical properties are well explained, and the transition matrix element is estimated. When this multiphonon-assisted transition mechanism is applied to an Er luminescence center in GaAs, the calculated temperature dependence of the Er 4f-shell luminescence agreed well with the experimental results. The energy transfer model should be generally applicable to rare-earth doped semiconductors.

Paper Details

Date Published: 3 January 1996
PDF: 10 pages
Proc. SPIE 2706, Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions, (3 January 1996); doi: 10.1117/12.229152
Show Author Affiliations
Akihito Taguchi, NTT Basic Research Labs. (Japan)
Kenichiro Takahei, NTT Basic Research Labs. (Japan)


Published in SPIE Proceedings Vol. 2706:
Tenth Feofilov Symposium on Spectroscopy of Crystals Activated by Rare-Earth and Transitional-Metal Ions
Alexander I. Ryskin; V. F. Masterov, Editor(s)

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