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Proceedings Paper

Recent progress in nonpolar and semi-polar GaN light emitters on patterned Si substrates
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Paper Abstract

Growth of nonpolar and semi-polar GaN and GaN-based structures offers the opportunity to reduce quantum confined Stark effect and possibly increase indium incorporation, as compared to polar structures, for enhanced performance in green and longer wavelength light emitters. However, the development of the nonpolar and semi-polar GaN growth is hampered by the lack of suitable substrates. Silicon, despite its large thermal-expansion and lattice mismatch with GaN, provides the advantages of the availability of large-size wafers with high crystalline quality at low cost, good electrical conductivity, and feasibility of its removal through chemical etching for better light extraction and heat transfer. In this article, we overview the recent progress in epitaxial growth of nonpolar and semi-polar GaN-based structures on patterned Si substrates. Also discussed are structural and optical properties of the resulting material.

Paper Details

Date Published: 23 February 2018
PDF: 16 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 1053208 (23 February 2018); doi: 10.1117/12.2291281
Show Author Affiliations
K. Ding, Virginia Commonwealth Univ. (United States)
V. Avrutin, Virginia Commonwealth Univ. (United States)
N. Izyumskaya, Virginia Commonwealth Univ. (United States)
S. Metzner, Otto-von-Guericke-Univ. Magdeburg (Germany)
F. Bertram, Otto-von-Guericke-Univ. Magdeburg (Germany)
J. Christen, Otto-von-Guericke-Univ. Magdeburg (Germany)
U. Ozgur, Virginia Commonwealth Univ. (United States)
H. Morkoc, Virginia Commonwealth Univ. (United States)

Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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