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Proceedings Paper

3D hybrid integrated lasers for silicon photonics
Author(s): B. Song; S. Pinna; Y. Liu; L. Megalini; J. Klamkin
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Paper Abstract

A novel 3D hybrid integration platform combines group III-V materials and silicon photonics to yield high-performance lasers is presented. This platform is based on flip-chip bonding and vertical optical coupling integration. In this work, indium phosphide (InP) devices with monolithic vertical total internal reflection turning mirrors were bonded to active silicon photonic circuits containing vertical grating couplers. Greater than 2 mW of optical power was coupled into a silicon waveguide from an InP laser. The InP devices can also be bonded directly to the silicon substrate, providing an efficient path for heat dissipation owing to the higher thermal conductance of silicon compared to InP. Lasers realized with this technique demonstrated a thermal impedance as low as 6.2°C/W, allowing for high efficiency and operation at high temperature. InP reflective semiconductor optical amplifiers were also integrated with 3D hybrid integration to form integrated external cavity lasers. These lasers demonstrated a wavelength tuning range of 30 nm, relative intensity noise lower than -135 dB/Hz and laser linewidth of 1.5 MHz. This platform is promising for integration of InP lasers and photonic integrated circuits on silicon photonics.

Paper Details

Date Published: 22 February 2018
PDF: 7 pages
Proc. SPIE 10537, Silicon Photonics XIII, 105370V (22 February 2018); doi: 10.1117/12.2290445
Show Author Affiliations
B. Song, Univ. of California, Santa Barbara (United States)
S. Pinna, Univ. of California, Santa Barbara (United States)
Y. Liu, Univ. of California, Santa Barbara (United States)
L. Megalini, Univ. of California, Santa Barbara (United States)
J. Klamkin, Univ. of California, Santa Barbara (United States)

Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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