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Proceedings Paper

Internal quantum efficiency of nitride light emitters: a critical perspective
Author(s): Andreas Hangleiter; Torsten Langer; Philipp Henning; Fedor Alexej Ketzer; Heiko Bremers; Uwe Rossow
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Paper Abstract

The internal quantum efficiency (IQE) is a key property of light-emitting semiconductor structures. We critically review the most popular methods for determining the IQE. In particular, we discuss the impact of low- temperature non-radiative recombination on temperature-dependent CW photoluminescence measurements. Using temperature-dependent time-resolved photoluminescence we establish a method to verify 100 % IQE at low temperature and thus to obtain absolute internal quantum efficiencies at all temperatures.

Paper Details

Date Published: 23 February 2018
PDF: 8 pages
Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321P (23 February 2018); doi: 10.1117/12.2290082
Show Author Affiliations
Andreas Hangleiter, Technische Univ. Braunschweig (Germany)
Torsten Langer, Technische Univ. Braunschweig (Germany)
Philipp Henning, Technische Univ. Braunschweig (Germany)
Fedor Alexej Ketzer, Technische Univ. Braunschweig (Germany)
Heiko Bremers, Technische Univ. Braunschweig (Germany)
Uwe Rossow, Technische Univ. Braunschweig (Germany)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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