Single-shot ablation of GaAs samples by a collinear femtosecond-nanosecond (fs-ns) dual-pulse is investigated. Significantly enhanced material removal is achieved by optimally combining a single 8 ns pulse at 1064 nm and a single 50 fs pulse at 800 nm in time. The resulting ablation craters are examined for inter-pulse delays ranging from -50 ns (ns first) to +1 μs (fs first) as well as very long delays of ±30 s. Crater profilometry is conducted with white light interferometry and optical microscopy to determine the volume of ablated material and identify surface features that reveal information about the physical mechanism of material removal during fs-ns dual-pulse ablation.

Date Published: 19 February 2018
PDF: 8 pages
Proc. SPIE 10522, Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XVIII, 105221I (19 February 2018); doi: 10.1117/12.2290062

Published in SPIE Proceedings Vol. 10522:
Frontiers in Ultrafast Optics: Biomedical, Scientific, and Industrial Applications XVIII
Peter R. Herman; Michel Meunier; Roberto Osellame, Editor(s)