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Proceedings Paper

Flexible optoelectronics based on nitride nanostructures (Conference Presentation)
Author(s): Maria Tchernycheva; Nan Guan; Martina Morassi; Lorenzo Mancini; Joël Eymery; Christophe Durand; Hezhi Zhang; Lu Lu; Noelle Gogneau; Ali Madouri; Ludovic Largeau; Jean-Christophe Harmand

Paper Abstract

“Photonics Multiannual Strategic Roadmap 2014-2020” mentions flexible electronics, light sources, displays, sensors and solar cells as key emerging technologies with a high expected growth of the market share. Technologies based on organic semiconductors still suffer from a short lifetime and low efficacy as compared to their inorganic counterparts. To make a flexible device from inorganic semiconductors one should shrink the size of the active elements and to integrate them on mechanically-flexible substrates. This can be achieved using control-by-design nanowires. In this work, we address the growth of nitride nanowires on novel substrates and the fabrication and characterization of flexible devices based on nitride nanowires. First, we will discuss the epitaxy of GaN nanowires on graphene-on-SiO2 substrates. We show that without any catalyst or intermediate layer, the nanowires grow on graphene with an excellent selectivity compared to the uncovered SiO2 surface. Taking advantage of this selectivity, we demonstrate that organized arrays of nanowires can be synthesized by structuring the graphene layer. Next, we will discuss the approach for nanowire lift-off, transfer into polymer-embedded membranes and flexible contacting. The realization and characterization of flexible light sources, photodetectors and piezogenerators will be presented.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321T (14 March 2018); doi: 10.1117/12.2289744
Show Author Affiliations
Maria Tchernycheva, Univ. Paris-Sud 11 (France)
Nan Guan, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Martina Morassi, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Lorenzo Mancini, Ctr. de nanosciences et de nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Joël Eymery, CEA-INAC (France)
Univ. Grenoble (France)
Christophe Durand, CEA-INAC (France)
Univ. Grenoble Alpes (France)
Hezhi Zhang, Ctr. de nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Lu Lu, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Noelle Gogneau, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Ali Madouri, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Ludovic Largeau, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)
Jean-Christophe Harmand, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Ctr. National de la Recherche Scientifique (France)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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