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Proceedings Paper

III-nitride on silicon microdisks: electrical injection and bus waveguide side-coupling (Conference Presentation)
Author(s): Farsane Tabataba-Vakili; Iännis Roland; Stéphanie Rennesson; Eric Frayssinet; Julien Brault; Moustafa El Kurdi; Xavier Checoury; Bruno Paulillo; Raffaele Colombelli; Thierry Guillet; Christelle Brimont; Benjamin Damilano; Fabrice Semond; Bruno Gayral; Philippe Boucaud

Paper Abstract

Group-III-nitride nanophotonics on silicon is a booming field, from the near-IR to the UV spectral range. The main interest of III-nitride nanophotonic circuits is the integration of active structures and laser sources. Laser sources with a small footprint can be obtained with microresonators formed by photonic crystals or microdisks, exhibiting quality factors up to a few thousand down to the UV-C. So far, single microdisk laser devices have been demonstrated, mostly under optical pumping. Combining microdisk lasers under electrical injection with passive devices represents a major challenge in realizing a viable III-nitride nanophotonic platform on silicon. As a first step to realize this goal, we have separately demonstrated electroluminescence from microdisks and side-coupling of microdisks to bus waveguides with outcoupling gratings in the blue spectral range. We have developed the fabrication of electrically injected microdisks with a circular p-contact on top of the disk that is connected to a larger pad via a mechanically stable metal microbridge. Blue electroluminescence is observed under current injection at room temperature. We also demonstrated high Q factor (Q > 2000) WGMs in the blue spectral range from microdisks side-coupled to bus waveguides, as measured from the luminescence of embedded InGaN quantum wells. The WGM resonances are clearly observed through outcoupling gratings following propagation in partially etched waveguides to remove quantum well absorption. Small gaps between microdisks and bus waveguides of around 100 nm are necessary for efficient coupling in the blue spectral range, which represents a major fabrication challenge. We will discuss the progress brought by these building blocks to generate future III-nitride photonic circuits.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321K (14 March 2018); doi: 10.1117/12.2289556
Show Author Affiliations
Farsane Tabataba-Vakili, Ctr. de Nanosciences et de Nanotechnologies (France)
Institut NÉEL (France)
Iännis Roland, Univ. Paris-Saclay (France)
C2N-CNRS (France)
Stéphanie Rennesson, Univ. Côte d’Azur (France)
Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Ctr. National de la Recherche Scientifique (France)
Eric Frayssinet, Univ. Côte d’Azur (France)
Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Ctr. National de la Recherche Scientifique (France)
Julien Brault, Univ. Côte d’Azur (France)
Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Ctr. National de la Recherche Scientifique (France)
Moustafa El Kurdi, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Univ. Paris Saclay (France)
Xavier Checoury, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris Sud 11 (France)
Univ. Paris Saclay (France)
Bruno Paulillo, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ Paris-Sud 11 (France)
Univ. Paris Saclay (France)
Raffaele Colombelli, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris Sud 11 (France)
Univ. Paris Saclay (France)
Thierry Guillet, Univ. Montpellier (France)
Ctr. National de la Recherche Scientifique (France)
Christelle Brimont, Lab. Charles Coulomb (France)
Univ. de Montpellier (France)
Ctr. National de la Recherche Scientifique (France)
Benjamin Damilano, Univ. Côte d’Azur (France)
Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Ctr. National de la Recherche Scientifique (France)
Fabrice Semond, Univ. Côte d’Azur (France)
Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Ctr. National de la Recherche Scientifique (France)
Bruno Gayral, Institut Nanosciences et Cryogénie, Commissariat à l'Énergie Atomique (France)
Univ. Grenoble Alpes (France)
Philippe Boucaud, Ctr. de Nanosciences et de Nanotechnologies (France)
Univ. Paris-Sud 11 (France)
Univ. Paris Saclay (France)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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