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Proceedings Paper

Impact of phosphorus ion implantation on the material and optical properties of InAs/GaAs quantum dots
Author(s): S. Upadhyay; A. Mandal; V. Chavan; N. B. V. Subrahmanyam; P. Bhagwat; S. Chakrabarti
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Paper Abstract

In this work, we investigated the effects of phosphorus ions implantation on InAs/GaAs QDs by varying the fluences from 8× 1011 to 1×1013 ions/cm2 at a fixed energy of 50 keV. Temperature dependent photoluminescence (PL) study shows a suppression of emission efficiency with the increase of fluence of implanted ions, attributed to the generation of defects/dislocations near around QDs acting as trapping centers for photocarriers. All the implanted samples demonstrated degradation in activation energy from 184 meV (as-grown) to 73 meV (highest fluence sample) indicating weaker carrier confinement in QDs. Implantation also resulted 40 nm blue shift in PL emission wavelength which is caused due to the atomic intermixing between QDs and surrounding materials. Rocking curves plotted from the double crystal X-ray diffraction study, depict a vanishing trend of satellite peaks with the increase of fluence of implanted ions, resulting from the loss of interface sharpness due to interdiffusion.

Paper Details

Date Published: 21 February 2018
PDF: 7 pages
Proc. SPIE 10543, Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, 1054309 (21 February 2018); doi: 10.1117/12.2289543
Show Author Affiliations
S. Upadhyay, Indian Institute of Technology Bombay (India)
A. Mandal, Bhabha Atomic Research Ctr. (India)
V. Chavan, Bhabha Atomic Research Ctr. (India)
N. B. V. Subrahmanyam, Indian Institute of Technology Bombay (India)
P. Bhagwat, Indian Institute of Technology Bombay (India)
S. Chakrabarti, Bhabha Atomic Research Ctr. (India)


Published in SPIE Proceedings Vol. 10543:
Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV
Diana L. Huffaker; Holger Eisele, Editor(s)

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