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Proceedings Paper

Group IV mid-infrared devices and circuits
Author(s): G. Z. Mashanovich; J. Soler Penadés; W. Cao; Z. Qu; A. Osman; Y. Wu; A. Z. Khokhar; C. J. Littlejohns; S. Stankovic; S. Reynolds; V. Mittal; G. S. Murugan; J. S. Wilkinson; Y. Qi; F. Y. Gardes; D. J. Thomson; M. Nedeljkovic
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Paper Abstract

In this paper we present silicon and germanium-based material platforms for the mid-infrared wavelength region and we report several active and passive devices realised in these materials. We particularly focus on devices and circuits for wavelengths longer than 7 micrometers.

Paper Details

Date Published: 23 February 2018
PDF: 6 pages
Proc. SPIE 10535, Integrated Optics: Devices, Materials, and Technologies XXII, 1053512 (23 February 2018); doi: 10.1117/12.2289531
Show Author Affiliations
G. Z. Mashanovich, Univ. of Southampton (United Kingdom)
J. Soler Penadés, Univ. of Southampton (United Kingdom)
W. Cao, Univ. of Southampton (United Kingdom)
Z. Qu, Univ. of Southampton (United Kingdom)
A. Osman, Univ. of Southampton (United Kingdom)
Y. Wu, Univ. of Southampton (United Kingdom)
A. Z. Khokhar, Univ. of Southampton (United Kingdom)
C. J. Littlejohns, Univ. of Southampton (United Kingdom)
S. Stankovic, Univ. of Southampton (United Kingdom)
S. Reynolds, Univ. of Southampton (United Kingdom)
V. Mittal, Univ. of Southampton (United Kingdom)
G. S. Murugan, Univ. of Southampton (United Kingdom)
J. S. Wilkinson, Univ. of Southampton (United Kingdom)
Y. Qi, Univ. of Southampton (United Kingdom)
F. Y. Gardes, Univ. of Southampton (United Kingdom)
D. J. Thomson, Univ. of Southampton (United Kingdom)
M. Nedeljkovic, Univ. of Southampton (United Kingdom)


Published in SPIE Proceedings Vol. 10535:
Integrated Optics: Devices, Materials, and Technologies XXII
Sonia M. García-Blanco; Pavel Cheben, Editor(s)

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