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Proceedings Paper

5.5nm wavelength-tunable high-power MOPA diode laser system at 971 nm
Author(s): Mahmoud Tawfieq; André Müller; Jörg Fricke; Pietro Della Casa; Peter Ressel; Arnim Ginolas; David Feise; Bernd Sumpf; Günther Tränkle
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Paper Abstract

In this work, a widely tunable hybrid master oscillator power amplifier (MOPA) diode laser with 6.2 W of output power at 971.8 nm will be presented. The MO is a DBR laser, with a micro heater embedded on top of the DBR grating for wavelength tunability. The emitted light of the MO is collimated and coupled into a tapered amplifier using micro cylindrical lenses, all constructed on a compact 25 mm ⨯ 25 mm conduction cooled laser package. The MOPA system emits light with a measured spectral width smaller than 17 pm, limited by the spectrometer, and with a beam propagation factor of M2 1/e2 = 1.3 in the slow axis. The emission is thus nearly diffraction limited with 79% of the total power within the central lobe (4.9 W diffraction limited). The electrically controlled micro-heater provides up to 5.5 nm of wavelength tunability, up to a wavelength of 977.3 nm, while maintaining an output power variation of only ± 0.16 % for the entire tuning range.

Paper Details

Date Published: 19 February 2018
PDF: 6 pages
Proc. SPIE 10553, Novel In-Plane Semiconductor Lasers XVII, 105531F (19 February 2018); doi: 10.1117/12.2289521
Show Author Affiliations
Mahmoud Tawfieq, Ferdinand-Braun Institute (Germany)
André Müller, Ferdinand-Braun Institute (Germany)
Jörg Fricke, Ferdinand-Braun Institute (Germany)
Pietro Della Casa, Ferdinand-Braun Institute (Germany)
Peter Ressel, Ferdinand-Braun-Institut (Germany)
Arnim Ginolas, Ferdinand-Braun-Institut (Germany)
David Feise, Ferdinand-Braun-Institut (Germany)
Bernd Sumpf, Ferdinand-Braun-Institut (Germany)
Günther Tränkle, Ferdinand-Braun-Institut (Germany)

Published in SPIE Proceedings Vol. 10553:
Novel In-Plane Semiconductor Lasers XVII
Alexey A. Belyanin; Peter M. Smowton, Editor(s)

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