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Proceedings Paper

A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications
Author(s): Yiding Lin; Danhao Ma; Kwang Hong Lee; Jurgen Michel; Chuan Seng Tan
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Paper Abstract

A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

Paper Details

Date Published: 22 February 2018
PDF: 7 pages
Proc. SPIE 10537, Silicon Photonics XIII, 1053704 (22 February 2018); doi: 10.1117/12.2288154
Show Author Affiliations
Yiding Lin, Nanyang Technological Univ. (Singapore)
SMART-Singapore MIT Alliance for Research and Technology (Singapore)
Danhao Ma, Massachusetts Institute of Technology (United States)
Kwang Hong Lee, SMART-Singapore MIT Alliance for Research & Technology (Singapore)
Jurgen Michel, Massachusetts Institute of Technology (United States)
SMART-Singapore MIT Alliance for Research & Technology (Singapore)
Chuan Seng Tan, Nanyang Technological Univ. (Singapore)
SMART-Singapore MIT Alliance for Research & Technology (Singapore)


Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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