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Proceedings Paper

High-energy diode side-pumped Er:YLF laser generating 100 mJ @ 100 Hz
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Paper Abstract

We report on a newly developed high-energy diode side-pumped Er:YLF solid state laser emitting at at 2.81 μm. The pulsed laser generates 100 mJ pulses at 400 μs and 100 Hz, respectively 10W average laser power. The laser operates efficiently at room temperature and has a good beam quality of M2 < 12. The long lifetime of the upper laser level and the inherently linearly polarized laser beam of Er:YLF enables efficient Q-switching for tissue ablation with nanosecond pulses and pumping of non-linear crystals for mid-IR generation.

Paper Details

Date Published: 15 February 2018
PDF: 7 pages
Proc. SPIE 10511, Solid State Lasers XXVII: Technology and Devices, 105110J (15 February 2018);
Show Author Affiliations
Manuel Messner, Pantec Engineering AG (Liechtenstein)
Arne Heinrich, Pantec Engineering AG (Liechtenstein)
Clemens Hagen, Pantec Engineering AG (Liechtenstein)
Karl Unterrainer, Vienna Univ. of Technology (Austria)

Published in SPIE Proceedings Vol. 10511:
Solid State Lasers XXVII: Technology and Devices
W. Andrew Clarkson; Ramesh K. Shori, Editor(s)

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