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Proceedings Paper

Polar and semi-polar oriented InGaN-(In)GaN multiple quantum wells for red-light emitters (Conference Presentation)
Author(s): Thi Huong Ngo; Bernard Gil ; Benjamin Damilano ; Aimeric Courville; Philippe De Mierry

Paper Abstract

The optical performance of red-light emitters grown along polar orientation InGaN/(In)GaN multiple quantum well (MQW) with semi-polar structure are examined and compared. Given a colour of the emitted light, time-resolved photoluminescence (TRPL) measurements show a large difference of decay times between polar and semi-polar structures, when temperature varies in 8 K to 300 K range. The TRPL results evidence a weak internal electric field for the semi-polar structure as the decay time in this structure is slightly wavelength-dependent and is, at a given wavelength, two orders of magnitude smaller than for the polar sample. The Auger non-radiative recombination is probed by the evolution of the PL intensity with changing photo-excitation power density. In the semi-polar structure, the Auger non-radiative recombination is observed at a threshold PT of photo-excitation density 200 times smaller than in the polar oriented sample. This observation is linked to the difference in efficiency of the localization effect ( different indium compositions) and impact of the quantum confined Stark effect (QCSE) for polar and semi-polar samples. Both localization effect and the QCSE facilitate the establishment of carrier-carrier repulsions before the radiative recombination of electrons and holes occurs. This favor Auger non-radiative recombination process and hence leads to the decrease of the IQE. The smaller threshold PT of the semi-polar oriented structure indicates that the QCSE dominates the reduction of the IQE at high injection level rather than the localization. The semi-polar oriented structure is one promising structure for growth red-light emitters with strong luminescence.

Paper Details

Date Published: 14 March 2018
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Proc. SPIE 10532, Gallium Nitride Materials and Devices XIII, 105321Z (14 March 2018); doi: 10.1117/12.2287399
Show Author Affiliations
Thi Huong Ngo, Univ. Montpellier (France)
Bernard Gil , Lab. Charles Coulomb (France)
Benjamin Damilano , Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Univ. Côte d’Azur (France)
Aimeric Courville, Université Côte d’Azur, CRHEA-CNRS (France)
Philippe De Mierry, Ctr. de Recherche sur l'Hétéro-Epitaxie et ses Applications (France)
Univ. Côte d’Azur (France)


Published in SPIE Proceedings Vol. 10532:
Gallium Nitride Materials and Devices XIII
Jen-Inn Chyi; Hiroshi Fujioka; Hadis Morkoç, Editor(s)

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