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Proceedings Paper

Redshift of lasing modes in time-resolved spectra for GaAs-AlGaAs core-shell nanowires lasers on silicon (Conference Presentation)

Paper Abstract

III-V semiconductor nanowires (NW) are being considered as future coherent light sources for optoelectronic chips due to their small footprint and high refractive index. The 1D confinement also results in a natural Fabry-Perot resonance cavity. However, the most important feature is the feasibility of direct growth on Si platform. The research carried out in this work consists of time-resolved photoluminescence (TRPL) spectra at different optical excitation powers and temperatures for single GaAs-AlGaAs core-shell nanowire nanolasers on Silicon. The carrier dynamics response for a single nanolaser below and above the threshold is obtained for different sets of temperatures. The lifetime corresponding to the excitation power below the threshold is of the order of hundreds of picoseconds at all low temperature intervals (4K to 60K). With increasing pump power, the decay time gets shorter until the threshold is achieved. At this point, two lifetimes are obtained for the lasing modes, one of the order of tens of picoseconds (stimulated emission) and another of the order of hundreds of picoseconds (spontaneous emission). A redshift in time-resolved spectra (2-3nm in an interval of 700ps) is measured which disappears at higher temperatures (after 60K). This redshift is a result of the change in refractive index caused by a decrease in carrier density with time. This effect disappears at higher temperatures due to the increase of non-radiative recombination.

Paper Details

Date Published: 14 March 2018
Proc. SPIE 10537, Silicon Photonics XIII, 1053713 (14 March 2018); doi: 10.1117/12.2286315
Show Author Affiliations
Juan Salvador Dominguez Morales, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Thomas Stettner, Walter Schottky Institut (Germany)
Shumithira Gandan, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
David P. Williams, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)
Gregor Koblmueller, Walter Schottky Institut (Germany)
Jonathan J. Finley, Walter Schottky Institut (Germany)
Tomasz J. Ochalski, Cork Institute of Technology (Ireland)
Tyndall National Institute (Ireland)

Published in SPIE Proceedings Vol. 10537:
Silicon Photonics XIII
Graham T. Reed; Andrew P. Knights, Editor(s)

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