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Proceedings Paper

Size and shape dependent optical properties of InAs quantum dots
Author(s): Ali Imran; Jianliang Jiang; Deborah Eric; Muhammad Yousaf
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Paper Abstract

In this study Electronic states and optical properties of self assembled InAs quantum dots embedded in GaAs matrix have been investigated. Their carrier confinement energies for single quantum dot are calculated by time-independent Schrödinger equation in which hamiltonianian of the system is based on effective mass approximation and position dependent electron momentum. Transition energy, absorption coefficient, refractive index and high frequency dielectric constant for spherical, cylindrical and conical quantum dots with different sizes in different dimensions are calculated. Comparative studies have revealed that size and shape greatly affect the electronic transition energies and absorption coefficient. Peaks of absorption coefficients have been found to be highly shape dependent.

Paper Details

Date Published: 12 January 2018
PDF: 9 pages
Proc. SPIE 10622, 2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices, 1062209 (12 January 2018); doi: 10.1117/12.2286297
Show Author Affiliations
Ali Imran, Beijing Institute of Technology (China)
Jianliang Jiang, Beijing Institute of Technology (China)
Deborah Eric, Beijing Institute of Technology (China)
Muhammad Yousaf, Peking Univ. (China)


Published in SPIE Proceedings Vol. 10622:
2017 International Conference on Optical Instruments and Technology: Micro/Nano Photonics: Materials and Devices
Baojun Li; Xingjun Wang; Ya Sha Yi; Liquan Dong, Editor(s)

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