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Proceedings Paper

Performance of InGaAs/InP planar infrared detector with different passivation films
Author(s): Honghai Deng; Haibao Shao; Bo Yang; Jing Huang; Zhiliang Wang; Xue Li; Xiumei Shao; Haimei Gong
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Paper Abstract

In order to study the effect of different passivation films on the detector performance, the front-illuminated planar-type 256×1 element InGaAs/InP detectors were fabricated with SiNx film and SiO2 film. The SiNx film was deposited by plasma enhanced chemical vapor deposition (PECVD) and SiO2 film was deposited by magnetron sputtering technology. The electrical properties and photoresponse characteristics were investigated after the detector mounted on dewar. The photoresponse maps from laser beam induced current (LBIC) method show that the isolation of adjacent elements of the detector with SiNx film is better than the detector with SiO2 film. Furthermore, at room temperature the average density of dark current and the average peak detectivity of the two kinds of detector is 26.8 nA/cm2 and 41.2 nA/cm2 at 100 mV reverse bias, 1.21×1012 cm·Hz1/2/W and 1.08×1012 cm·Hz1/2/W respectively. Therefore, the detector with SiNx film deposited by PECVD could availably passivate the surface in comparison with the detector with SiO2 film by magnetron sputtering technology.

Paper Details

Date Published: 24 October 2017
PDF: 5 pages
Proc. SPIE 10462, AOPC 2017: Optical Sensing and Imaging Technology and Applications, 1046232 (24 October 2017); doi: 10.1117/12.2285012
Show Author Affiliations
Honghai Deng, Nantong Univ. (China)
Haibao Shao, Nantong Univ. (China)
Bo Yang, Shanghai Institute of Technical Physics (China)
Jing Huang, Nantong Univ. (China)
Zhiliang Wang, Nantong Univ. (China)
Xue Li, Shanghai Institute of Technical Physics (China)
Xiumei Shao, Shanghai Institute of Technical Physics (China)
Haimei Gong, Shanghai Institute of Technical Physics (China)


Published in SPIE Proceedings Vol. 10462:
AOPC 2017: Optical Sensing and Imaging Technology and Applications
Yadong Jiang; Haimei Gong; Weibiao Chen; Jin Li, Editor(s)

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