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Proceedings Paper

PbS quantum dot-graphene hybrid phototransistor
Author(s): Yongli Che; Yating Zhang; Xiaolong Cao; Haiting Zhang; Xiaoxian Song; Mingxuan Cao; Yu Yu; Heng Zhang; Guizhong Zhang; Jianquan Yao
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Paper Abstract

Ultrasensitive near-infrared phototransistors based on Lead sulfide (PbS) quantum dots (QDs)-graphene hybrid channel are fabricated by facile solution processing. The device combines the advantages of the large light absorbance of QDs high mobility of graphene. Under light illumination, the photogenerated carriers will transfer from QDs to graphene. As result, the phototransistor exhibits fast response speed with rise time of 1.4 ms and fall time of 1.3 ms at 36 mW/cm2 illumination of 808 nm wavelength, meaning the device can follow a fast switched optical signal. The responsivity (R), effective quantum efficiency (EQE) of the device are 6 A/W and 961% under 166mW/cm2 illumination, respectively. It expected that the PbS QDs–graphene hybrid devices are promising for fast response, low-cost and easy fabrication photoelectronics

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics, 1046013 (24 October 2017); doi: 10.1117/12.2284464
Show Author Affiliations
Yongli Che, Tianjin Univ. (China)
Yating Zhang, Tianjin Univ. (China)
Xiaolong Cao, Shandong Univ. of Science and Technology (China)
Haiting Zhang, Tianjin Univ. (China)
Xiaoxian Song, Tianjin Univ. (China)
Mingxuan Cao, Tianjin Univ. (China)
Yu Yu, Tianjin Univ. (China)
Heng Zhang, Tianjin Univ. (China)
Guizhong Zhang, Tianjin Univ. (China)
Jianquan Yao, Tianjin Univ. (China)


Published in SPIE Proceedings Vol. 10460:
AOPC 2017: Optoelectronics and Micro/Nano-Optics
Min Qiu; Min Gu; Xiaocong Yuan; Zhiping Zhou, Editor(s)

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