Share Email Print
cover

Proceedings Paper

Measurements of loss and gain of optically pumped InGaAs semiconductor lasers based on the photoluminescence spectra from dual facets
Author(s): Y. Jia; Q.-N. Yu; W. Lu; J. Zhang; X. Zhang; Y.-Q. Ning; J. Wu
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

In this paper, the loss and gain characteristics of optically-pumped InGaAs/GaAs quantum well lasers are measured based on the photoluminescence spectra from dual facets of a single laser device. The device is pumped by 808nm fiber coupled semiconductor lasers controlled with pulsing signal and beam shaping system to reduce the thermal effect. The result of loss spectra is consistent with gain spectra well. In addition, the special double-peak configuration in the loss and gain spectra is observed and analyzed, in term of the strain mechanism and band structure of InGaAs quantum well. The results will be very helpful to the study and design of the InGaAs semiconductor lasers

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10457, AOPC 2017: Laser Components, Systems, and Applications, 1045710 (24 October 2017); doi: 10.1117/12.2283349
Show Author Affiliations
Y. Jia, Beihang Univ. (China)
Q.-N. Yu, Beihang Univ. (China)
W. Lu, Beihang Univ. (China)
J. Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
X. Zhang, Changchun Institute of Optics, Fine Mechanics and Physics (China)
Y.-Q. Ning, Changchun Institute of Optics, Fine Mechanics and Physics (China)
J. Wu, Beihang Univ. (China)


Published in SPIE Proceedings Vol. 10457:
AOPC 2017: Laser Components, Systems, and Applications
Shibin Jiang; Lijun Wang; Lan Jiang; Long Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top