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Proceedings Paper

Photoresponse and photo-induced memory effect in the organic field-effect transistor based on AlOX nanoparticles at the interface of semiconductor/dielectric
Author(s): Yunfei Cheng; Wu Wang
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Paper Abstract

In this work, the photoresponse and photo-induced memory effect were demonstrated in an organic field-effect transistor (OFET) with semiconductor pentacene and SiO2 as the active and gate dielectric layers, respectively. By inserting AlOX nanoparticles (NPs) at the interface of pentacene/SiO2, obvious enhancing photoresponse was obtained in the OFET with the maximum responsivity and photosensitivity of about 15 A/W and 100, respectively. Moreover, the stable photoinduced memory effect was achieved in the OFET, attributing to the photogenerated electrons captured by the interface traps of the AlOX NPs/SiO2.

Paper Details

Date Published: 24 October 2017
PDF: 8 pages
Proc. SPIE 10460, AOPC 2017: Optoelectronics and Micro/Nano-Optics, 104600F (24 October 2017); doi: 10.1117/12.2283021
Show Author Affiliations
Yunfei Cheng, The Third Research Institute of Ministry of Public Security (China)
Wu Wang, The Third Research Institute of Ministry of Public (China)

Published in SPIE Proceedings Vol. 10460:
AOPC 2017: Optoelectronics and Micro/Nano-Optics
Min Qiu; Min Gu; Xiaocong Yuan; Zhiping Zhou, Editor(s)

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