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Proceedings Paper

Dual-wavelength external cavity laser device for fluorescence suppression in Raman spectroscopy
Author(s): Xuting Zhang; Zhijian Cai; Jianhong Wu
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Paper Abstract

Raman spectroscopy has been widely used in the detection of drugs, pesticides, explosives, food additives and environmental pollutants, for its characteristics of fast measurement, easy sample preparation, and molecular structure analyzing capability. However, fluorescence disturbance brings a big trouble to these applications, with strong fluorescence background covering up the weak Raman signals. Recently shifted excitation Raman difference spectroscopy (SERDS) not only can completely remove the fluorescence background, but also can be easily integrated into portable Raman spectrometers. Usually, SERDS uses two lasers with small wavelength gap to excite the sample, then acquires two spectra, and subtracts one to the other to get the difference spectrum, where the fluorescence background will be rejected. So, one key aspects of successfully applying SERDS method is to obtain a dual-wavelength laser source. In this paper, a dual-wavelength laser device design based on the principles of external cavity diode laser (ECDL) is proposed, which is low-cost and compact. In addition, it has good mechanical stability because of no moving parts. These features make it an ideal laser source for SERDS technique. The experiment results showed that the device can emit narrow-spectral-width lasers of two wavelengths, with the gap smaller than 2 nanometers. The laser power corresponding to each wavelength can be up to 100mW.

Paper Details

Date Published: 24 October 2017
PDF: 6 pages
Proc. SPIE 10457, AOPC 2017: Laser Components, Systems, and Applications, 104570M (24 October 2017); doi: 10.1117/12.2283004
Show Author Affiliations
Xuting Zhang, Soochow Univ. (China)
Zhijian Cai, Soochow Univ. (China)
Jianhong Wu, Soochow Univ. (China)


Published in SPIE Proceedings Vol. 10457:
AOPC 2017: Laser Components, Systems, and Applications
Shibin Jiang; Lijun Wang; Lan Jiang; Long Zhang, Editor(s)

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