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Proceedings Paper

EUV modeling in the multi-beam mask writing era
Author(s): Ryan Pearman; Harold Zable; Aki Fujimura
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Paper Abstract

For some years it has been known that the presence of a multi-layer stack creates an enhanced back-scatter effect at the 1μm length scale. Several authors have reported a non-Gaussian behavior – exponential or worse – that is challenging to both simulate and correct for in a production environment due to the long interaction area of the effect. With the onset of extreme ultra-violet (EUV) lithography, and the likely use in the new multi-beam mask writers, we revisit the EUV midrange effect from first principles, identify the impact from the new mask writers, and demonstrate a production-ready system to characterize and correct for the effect.

Paper Details

Date Published: 13 July 2017
PDF: 11 pages
Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045408 (13 July 2017); doi: 10.1117/12.2282784
Show Author Affiliations
Ryan Pearman, D2S, Inc. (United States)
Harold Zable, D2S, Inc. (United States)
Aki Fujimura, D2S, Inc. (United States)


Published in SPIE Proceedings Vol. 10454:
Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)

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