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Proceedings Paper

CLMPC: curvilinear MPC in a mask data preparation flow
Author(s): Ingo Bork; Murali Reddy; Bhardwaj Durvasula; Nageswara Rao; Malavika Sharma; Peter Buck
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Paper Abstract

Curvilinear mask shapes have become one of the resolution enhancement technology options in optical lithography. While this technology has been demonstrated already at the 65 nm node [1], it becomes a more important option beyond the 14 nm node. One of the limiting factors for deploying curvilinear mask shapes for sub-14nm nodes is the need for mask process corrections (MPC). A solution for Curvilinear MPC (CLMPC) is demonstrated and discussed in this paper along with various options for the mask data preparation flows for VSB mask writers and raster based Multi-Beam mask writers. Mask Rule Check (MRC) is identified as a critical step in this data preparation flow for curvilinear shapes, and it is demonstrated that model-based MRC is a viable solution for curvilinear mask shapes.

Paper Details

Date Published: 31 October 2017
PDF: 8 pages
Proc. SPIE 10451, Photomask Technology 2017, 1045109 (31 October 2017);
Show Author Affiliations
Ingo Bork, Mentor, A Siemens Co. (United States)
Murali Reddy, Mentor Graphics (India) Pvt. Ltd. (India)
Bhardwaj Durvasula, Mentor Graphics (India) Pvt. Ltd. (India)
Nageswara Rao, Mentor Graphics (India) Pvt. Ltd. (India)
Malavika Sharma, Mentor Graphics (India) Pvt. Ltd. (India)
Peter Buck, Mentor Graphics Corp. (United States)

Published in SPIE Proceedings Vol. 10451:
Photomask Technology 2017
Peter D. Buck; Emily E. Gallagher, Editor(s)

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