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Proceedings Paper

Initial evaluation result of DNQ-novolak resist system for advanced e-beam reticle fabrication
Author(s): Yasunori Yokoya; Hideo Kobayashi; Keishi Asakawa
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Paper Abstract

Advanced e-beam reticle fabrication, including PS and OPC mask, has created a growing need for an alternative resist system with superior contrast, linearity and resolution, dry-etching capability. Some aqueous-based DNQ-novolak resist systems have been proposed, however, their sensitivity has not reached a practical level yet without utilizing active and strong developer chemicals that cause excess resist dissolution in un-exposed area, which should lead to inferiority in contrast, critical dimension and defect quality level. We have investigated a development technique for DNQ-novolak resist systems by looking at resist dissolution rate in unexposed area in order to gain higher sensitivity by increasing dissolution rate but with maintaining superior development uniformity and defect quality level. During the study, specific difficulties were observed over several DNQ-novolak resists, which were 'non- linearity of resist dissolution' that led to less development uniformity and 'local and sporadic anomaly in resist dissolution' that was the seed of eventual peculiar clear defect caused by spin-spray development. The details of our findings on specific difficulties observed with DNQ-novolak resists are described in this paper. An initial evaluation result in very basic features of AZ5200, EBR900-M1, and ZMP300 is also reported.

Paper Details

Date Published: 8 December 1995
PDF: 10 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228202
Show Author Affiliations
Yasunori Yokoya, Hoya Corp. (Japan)
Hideo Kobayashi, Hoya Corp. (Japan)
Keishi Asakawa, Hoya Corp. (Japan)

Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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