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Proceedings Paper

Mix-and-match lithography technology on 6-in. wafers for nanofabrication
Author(s): Shyi-Long Shy; Tien Sheng Chao; C. H. Chu; Tan Fu Lei; Kazumitsu Nakamura; Wen-An Loong; Chun-Yen Chang
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Paper Abstract

This work describes the mix-and-match lithography technology for 0.1 micrometer device fabrication including a resist patterning process using a G-line stepper and an e-beam lithography system on 6 inch wafers, device pattern layout and device fabrication. A high resolution positive type e-beam resist combined with a high throughput G-line stepper is found to be ideally suitable for fabricating a device with nanometer scale.

Paper Details

Date Published: 8 December 1995
PDF: 7 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228194
Show Author Affiliations
Shyi-Long Shy, National Nano Device Lab. (Taiwan)
Tien Sheng Chao, National Nano Device Lab. (Taiwan)
C. H. Chu, National Nano Device Lab. (Taiwan)
Tan Fu Lei, National Nano Device Lab. (Taiwan)
Kazumitsu Nakamura, National Nano Device Lab. (Taiwan)
Wen-An Loong, National Chiao Tung Univ. (Taiwan)
Chun-Yen Chang, National Nano Device Lab. (Taiwan)

Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)

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