Attenuate phase shift masks have been developed for practical use because there are less limitations on the design, and mask defect repairs are easier. However, phase shift mask manufacturing technology improvement is needed not only for control of phase shift or transmission, but also higher accuracy and more precise patterns such as KrF application or for 4X reticle applications. This report shows the manufacturing method of the MoSiON attenuate phase shift mask with Cr border and its quality encourages its evaluation as a promising technique for finer patterns.

Date Published: 8 December 1995
PDF: 7 pages
Proc. SPIE 2621, 15th Annual BACUS Symposium on Photomask Technology and Management, (8 December 1995); doi: 10.1117/12.228179

Published in SPIE Proceedings Vol. 2621:
15th Annual BACUS Symposium on Photomask Technology and Management
Gilbert V. Shelden; James N. Wiley, Editor(s)