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Proceedings Paper

EUV single patterning for logic metal layers: achievement and challenge (Conference Presentation)
Author(s): Ryoung-Han Kim; Werner Gillijns; Youssef Drissi; Jae Uk Lee; Darko Trivkovic; Victor M. Blanco Carballo; Stephane Larivière; Rudi De Ruyter; Morin Dehan; Gregory R. McIntyre; Ling Ee Tan

Paper Abstract

imec’s investigation on EUV single patterning insertion into industry 5nm-relevant logic metal layer is discussed. Achievement and challenge across imaging, OPC, mask data preparation and resulting wafer pattern fidelity are reported with a broad scope. Best focus shift by mask 3D of isolated feature gets worse by the insertion of SRAF, which puts a negative impact on obtaining large overlap process window across features. imec’s effort across OPC including SMO and mask sizing is discussed with mask rule that affects mask writing. Resist stochastic induced defect is identified as a biggest challenge during the overall optimization, and options to overcome the challenge is investigated. For mask data preparation, dramatic increase in the data volume in EUV mask manufacturing is observed from iArF multiple patterning to EUV single patterning conversion, particularly by the insertion of SRAF. In addition, logic design consideration to make EUV single patterning more affordable compared to alternative patterning option is be discussed.

Paper Details

Date Published: 16 October 2017
Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045004 (16 October 2017);
Show Author Affiliations
Ryoung-Han Kim, IMEC (Belgium)
Werner Gillijns, IMEC (Belgium)
Youssef Drissi, IMEC (Belgium)
Jae Uk Lee, IMEC (Belgium)
Darko Trivkovic, IMEC (Belgium)
Victor M. Blanco Carballo, IMEC (Belgium)
Stephane Larivière, IMEC (Belgium)
Rudi De Ruyter, IMEC (Belgium)
Morin Dehan, IMEC (Belgium)
Gregory R. McIntyre, IMEC (Belgium)
Ling Ee Tan, IMEC (Belgium)

Published in SPIE Proceedings Vol. 10450:
International Conference on Extreme Ultraviolet Lithography 2017
Paolo A. Gargini; Patrick P. Naulleau; Kurt G. Ronse; Toshiro Itani, Editor(s)

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