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Proceedings Paper

Micro-defect repair assisted with contour-based 2D metrology
Author(s): Irene Shi; Eric Guo; Max Lu; Izumi Santo
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Paper Abstract

To deliver a defect-free photomask, is an essential step of mask manufacturing. EB (Electron-beam) repair is widely applied to deal with defects on photomasks, and has to cover etch and deposition capabilities without any pattern damage. However, mask repair is facing more challenges, with the shrinkage of minimum feature resolution for advanced technology nodes. Especially for micro defects at the edge of wafer printability specifications, differences between defect and reference may be tiny and hard to distinguish in visual or by existing methods on repair tools, so that it was difficult to start.

In this paper, a new approach named Contour-based 2D Metrology will be introduced as assistance for the repair processes of such challenging micro defects. Both CDSEM images of defect and reference are input for extracting; then contour-based patterns are overlapped for each other and compared with GDS as well, to describe quantitative differences for each micro area. Assisted with such rigorous and comprehensive data analysis, micro defects can be accurately positioned according to Aims Results and repair processes would be proceeding.

Paper Details

Date Published: 16 October 2017
PDF: 7 pages
Proc. SPIE 10451, Photomask Technology 2017, 104511U (16 October 2017);
Show Author Affiliations
Irene Shi, Semiconductor Manufacturing International Corp. (China)
Eric Guo, Semiconductor Manufacturing International Corp. (China)
Max Lu, Semiconductor Manufacturing International Corp. (China)
Izumi Santo, Holon Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 10451:
Photomask Technology 2017
Peter D. Buck; Emily E. Gallagher, Editor(s)

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