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Proceedings Paper

Multi-beam mask writer MBM-1000
Author(s): Hiroshi Matsumoto; Hiroshi Yamashita; Takao Tamura; Kenji Ohtoshi
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Paper Abstract

Multi-beam mask writer MBM-1000 will be released in Q4 2017 for N5 semiconductor production. The motivation to go to multi-beam is high throughput at aggressive shot count. MBM-1000 performs better than EBM-9500, which is our latest VSB writer, at shot count of 500 G/pass or more because of exposure count and beam current independent to figure count. Key technology for high throughput is cathode and high-voltage power supply which provides large beam emission current, inline data path and blanking aperture array (BAA) with 300 Gbps data ratio. In this paper, design of data path and BAA for MBM-1000 are described.

Paper Details

Date Published: 28 September 2017
PDF: 5 pages
Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 1044607 (28 September 2017);
Show Author Affiliations
Hiroshi Matsumoto, NuFlare Technology, Inc. (Japan)
Hiroshi Yamashita, NuFlare Technology, Inc. (Japan)
Takao Tamura, NuFlare Technology, Inc. (Japan)
Kenji Ohtoshi, NuFlare Technology, Inc. (Japan)


Published in SPIE Proceedings Vol. 10446:
33rd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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