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Proceedings Paper

Rigorous simulation of EUV mask pellicle
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Paper Abstract

Pellicles that satisfy transmission, emission, thermal, and mechanical requirements are highly desired for EUV high volume manufacturing. We present here the capability of integrating pellicles in the full flow of rigorous EUV lithography simulations. This platform allows us to investigate new coherence effects in EUV lithography when pellicle is used. Critical dimension uniformity and throughput loss due to pellicle defects and add-on particles are also analyzed. Our study provides theoretical insights into pellicle development and facilitates pellicle insertion in EUV lithography.

Paper Details

Date Published: 16 October 2017
PDF: 10 pages
Proc. SPIE 10451, Photomask Technology 2017, 104510S (16 October 2017);
Show Author Affiliations
Yulu Chen, GLOBALFOUNDRIES Inc. (United States)
Xiangyu Zhou, Synopsys GmbH (Germany)
Ulrich Klostermann, Synopsys GmbH (Germany)
Lei Sun, GLOBALFOUNDRIES Inc. (United States)
Obert Wood II, GLOBALFOUNDRIES Inc. (United States)
Mariya Braylovska, Synopsys GmbH (Germany)
Sajan Marokkey, Synopsys, GmbH (United States)
Francis Goodwin, GLOBALFOUNDRIES Inc. (United States)


Published in SPIE Proceedings Vol. 10451:
Photomask Technology 2017
Peter D. Buck; Emily E. Gallagher, Editor(s)

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