Share Email Print

Proceedings Paper

Advanced metrology by offline SEM data processing
Format Member Price Non-Member Price
PDF $17.00 $21.00

Paper Abstract

Today’s technology nodes contain more and more complex designs bringing increasing challenges to chip manufacturing process steps. It is necessary to have an efficient metrology to assess process variability of these complex patterns and thus extract relevant data to generate process aware design rules and to improve OPC models. Today process variability is mostly addressed through the analysis of in-line monitoring features which are often designed to support robust measurements and as a consequence are not always very representative of critical design rules. CD-SEM is the main CD metrology technique used in chip manufacturing process but it is challenged when it comes to measure metrics like tip to tip, tip to line, areas or necking in high quantity and with robustness. CD-SEM images contain a lot of information that is not always used in metrology. Suppliers have provided tools that allow engineers to extract the SEM contours of their features and to convert them into a GDS. Contours can be seen as the signature of the shape as it contains all the dimensional data. Thus the methodology is to use the CD-SEM to take high quality images then generate SEM contours and create a data base out of them. Contours are used to feed an offline metrology tool that will process them to extract different metrics. It was shown in two previous papers that it is possible to perform complex measurements on hotspots at different process steps (lithography, etch, copper CMP) by using SEM contours with an in-house offline metrology tool. In the current paper, the methodology presented previously will be expanded to improve its robustness and combined with the use of phylogeny to classify the SEM images according to their geometrical proximities.

Paper Details

Date Published: 28 September 2017
PDF: 12 pages
Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460L (28 September 2017); doi: 10.1117/12.2280096
Show Author Affiliations
Amine Lakcher, STMicroelectronics (France)
Univ. de Grenoble Alpes, LTM-CNRS (France)
Loïc Schneider, STMicroelectronics (France)
CEA LETI (France)
Bertrand Le-Gratiet, STMicroelectronics (France)
Julien Ducoté, STMicroelectronics (France)
Vincent Farys, STMicroelectronics (France)
Maxime Besacier, Univ. de Grenoble Alpes, LTM-CNRS (France)

Published in SPIE Proceedings Vol. 10446:
33rd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

© SPIE. Terms of Use
Back to Top