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Proceedings Paper

Contour-based etch modeling enablement: from pattern selection to final verification
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Paper Abstract

Traditional CD-SEM metrology reaches its limits when measuring complex configurations (e.g. advanced node contact configurations). SEM extracted contours embody valuable information which is essential for building a robust etch prediction model [1, 2]. CDSEM recipe complexity, processing time and measurement robustness can be improved using contour based metrology. However, challenges for measurement pattern selection as well as final model verification arise. In this work, we present the full flow of implementing etch prediction models calibrated and verified with SEM contours into a manufacturing environment.

Paper Details

Date Published: 28 September 2017
PDF: 10 pages
Proc. SPIE 10446, 33rd European Mask and Lithography Conference, 104460M (28 September 2017);
Show Author Affiliations
Jirka Schatz, GLOBALFOUNDRIES Dresden (Germany)
François Weisbuch, GLOBALFOUNDRIES Dresden (Germany)
Andrey Lutich, GLOBALFOUNDRIES Dresden (Germany)

Published in SPIE Proceedings Vol. 10446:
33rd European Mask and Lithography Conference
Uwe F.W. Behringer; Jo Finders, Editor(s)

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