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Proceedings Paper

The analysis of functional regions in the long-wavelength-infrared interband cascade photodetector
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Paper Abstract

Electronic structure of functional region of the interband cascade infrared photodetector designed to operate with cut-off wavelength of ~10.7 μm is calculated using second nearest neighbor sp3s* tight binding model with spin-orbit interactions. The effective bandgaps and alignment of the band edges are presented. Lattice mismatch of each region to the GaSb substrate is determined. The influence of InAs incorporation into the InSb interfacial layer is investigated. It is shown that up to 5% InAs addition to InSb interface in InAs/GaSb superlattice absorber is allowed if efficient carrier transport is to be kept. Furthermore, interface of up to x=2% InAsxSb1-x can be used in the proposed InAs/AlSb superlattice intraband relaxation region to keep its proper operation.

Paper Details

Date Published: 6 October 2017
PDF: 7 pages
Proc. SPIE 10433, Electro-Optical and Infrared Systems: Technology and Applications XIV, 104330K (6 October 2017);
Show Author Affiliations
Krzysztof Czuba, Institute of Electron Technology (Poland)
Iwona Sankowska, Institute of Electron Technology (Poland)
Agata Jasik, Institute of Electron Technology (Poland)
Ewa Papis-Polakowska, Institute of Electron Technology (Poland)
Janusz Kaniewski, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 10433:
Electro-Optical and Infrared Systems: Technology and Applications XIV
David A. Huckridge; Reinhard Ebert; Helge Bürsing, Editor(s)

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