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Proceedings Paper

Exposure characteristics of positive tone electron beam resist containing p-chloro-α-methylstyrene
Author(s): Shunsuke Ochiai; Tomohiro Takayama; Yukiko Kishimura; Hironori Asada; Manae Sonoda; Minako Iwakuma; Ryoichi Hoshino
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Paper Abstract

The positive tone resist consisted of methyl-α-chloroacrylate (ACM) and α-methylstyrene (MS) has higher sensitivity and higher dry etching resistance than poly (methylmethacrylate) (PMMA) due to the presence of a chlorine atom and a phenyl group. Copolymers consisted of ACM and p-chloro-α-methylstyrene (PCMS), where the additional chlorine atom is introduced in phenyl group compared with ACM-MS resist are synthesized and their exposure characteristics are investigated. ACM-PCMS resist with the ACM:PCMS composition ratio of 49:51 indicates the high solubility for amyl acetate developer. As the ACM composition ratio increases, the solubility of ACM-PCMS resist is suppressed. In both ACM-PCMS and ACM-MS resists, the sensitivity decreases while the contrast increases with increasing ACM ratio. When the composition ratio of ACM:PCMS is 69:31, 100/100 nm line and space pattern having a good shape is obtained at 120 μC/cm2 which is comparable to the required exposure dose for conventional ACM-MS resist with ACM:MS=50:50. Dry etching resistance of ACM:PCMS resists for Ar gas is also presented.

Paper Details

Date Published: 13 July 2017
PDF: 6 pages
Proc. SPIE 10454, Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology, 1045414 (13 July 2017); doi: 10.1117/12.2279079
Show Author Affiliations
Shunsuke Ochiai, Yamaguchi Univ. (Japan)
Tomohiro Takayama, Yamaguchi Univ. (Japan)
Yukiko Kishimura, Yamaguchi Univ. (Japan)
Hironori Asada, Yamaguchi Univ. (Japan)
Manae Sonoda, National Institute of Technology, Miyakonojo College (Japan)
Minako Iwakuma, National Institute of Technology, Miyakonojo College (Japan)
Ryoichi Hoshino, Fine Material System Inc. (Japan)

Published in SPIE Proceedings Vol. 10454:
Photomask Japan 2017: XXIV Symposium on Photomask and Next-Generation Lithography Mask Technology
Kiwamu Takehisa, Editor(s)

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