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Proceedings Paper

Measuring Te inclusion uniformity over large areas for CdTe/CZT imaging and spectrometry sensors
Author(s): Joe Bolke; Kathryn O'Brien; Peter Wall; Mike Spicer; Guillaume Gélinas; Jean-Nicolas Beaudry; W. Brock Alexander
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Paper Abstract

CdTe and CZT materials are technologies for gamma and x-ray imaging for applications in industry, homeland security, defense, space, medical, and astrophysics. There remain challenges in uniformity over large detector areas (50~75 mm) due to a combination of material purity, handling, growth process, grown in defects, doping/compensation, and metal contacts/surface states. The influence of these various factors has yet to be explored at the large substrate level required for devices with higher resolution both spatially and spectroscopically. In this study, we looked at how the crystal growth processes affect the size and density distributions of microscopic Te inclusion defects. We were able to grow single crystals as large as 75 mm in diameter and spatially characterize three-dimensional defects and map the uniformity using IR microscopy. We report on the pattern of observed defects within wafers and its relation to instabilities at the crystal growth interface.

Paper Details

Date Published: 29 September 2017
PDF: 7 pages
Proc. SPIE 10423, Sensors, Systems, and Next-Generation Satellites XXI, 104231M (29 September 2017);
Show Author Affiliations
Joe Bolke, 5N Plus Semiconductors, LLC (United States)
Kathryn O'Brien, 5N Plus Semiconductors, LLC (United States)
Peter Wall, 5N Plus Semiconductors, LLC (United States)
Mike Spicer, 5N Plus Semiconductors, LLC (United States)
Guillaume Gélinas, Regroupment Quebecois sur les materiaux de pointe (Canada)
Jean-Nicolas Beaudry, 5N Plus Inc. (Canada)
W. Brock Alexander, 5N Plus Semiconductors, LLC (United States)

Published in SPIE Proceedings Vol. 10423:
Sensors, Systems, and Next-Generation Satellites XXI
Steven P. Neeck; Jean-Loup Bézy; Toshiyoshi Kimura, Editor(s)

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