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Proceedings Paper

Spin-dependant tunnelling in ultrathin Schottky junctions based on La0.66Sr0.33MnO3 / SrTiO3:Nb interfaces (Conference Presentation)
Author(s): Philippe Lecoeur; Georg Kurij; Aurélie Solignac; Thomas Maroutian; Guillaume Agnus; Ruben Guerrero; Laurie E. Calvet; Myriam Pannetier-Lecoeur

Paper Abstract

Since the first observation of tunnelling effect in La0.7Sr0.3MnO3 based magnetic structures, the search for high TMR values has been the main goal of research in this field, aiming at developing high sensitive magnetic sensors. Nevertheless, oxides TMR often have high level of noise when using SrTiO3 as insulating barrier drastically reducing the interest of such devices [1]. Recently we introduced the use of heavily doped n-type semiconductor SrTi0.8Nb0.2O3 as fully depleted layer to form the insulating barrier [2-3]. Magneto-transport properties of the MTJs were studied as a function of applied bias, temperature and barrier thickness. It is found that using semiconducting barrier at the place of the standard insulator, leads to a significantly improved reproducibility of results and in the spectral noise density reduced by three orders of magnitude at low temperature. We ascribe that fact to a strongly reduced amount of defects, such as oxygen vacancies, in doped SrTi0.8Nb0.2O3. This results brings novel opportunities to develop high sensitive magnetic devices working at low temperature. [1] A. Solignac, G. Kurij, R. Guerrero, G. Agnus, T. Maroutian, C. Fermon, M. PArnnetier-Lecoeur, Ph. Lecoeur, SPIE Proceedings Series, 2015, 9551, pp.95512F (2016) [2] G. Kurij, A. Solignac, T. Maroutian, G. Agnus, R. Guerrero, L. E. Calvet, M. Pannetier-Lecoeur, and Ph. Lecoeur, Appl. Phys. Lett. 110, 082405 (2017) [3] G. Kurij, L. E. Calvet, R. Guerrero, T. Maroutian, G. Agnus, A. Solignac, and Ph. Lecoeur, Thin Solid Films vol. 716, part B, 82-85 (2016)

Paper Details

Date Published: 19 September 2017
Proc. SPIE 10357, Spintronics X, 1035706 (19 September 2017); doi: 10.1117/12.2277798
Show Author Affiliations
Philippe Lecoeur, Univ. Paris-Sud 11 (France)
Georg Kurij, Ctr. de Nanosciences et de Nanotechnologies (France)
Aurélie Solignac, CEA, Ctr. de SACLAY (France)
Thomas Maroutian, Univ. Paris-Sud 11 (France)
Guillaume Agnus, Univ. Paris-Sud 11 (France)
Ruben Guerrero, IMDEA Nanociencia (Spain)
Laurie E. Calvet, Ctr. de Nanosciences et de Nanotechnologies (France)
Myriam Pannetier-Lecoeur, CEA, Ctr. de SACLAY (France)

Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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