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Proceedings Paper

Compact 2100 nm laser diode module for next-generation DIRCM
Author(s): Edgaras Dvinelis; Mindaugas Greibus; Augustinas Trinkūnas; Greta Naujokaitė; Augustinas Vizbaras; Dominykas Vizbaras; Kristijonas Vizbaras
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Paper Abstract

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics.

2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of ~28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Paper Details

Date Published: 5 October 2017
PDF: 6 pages
Proc. SPIE 10435, Technologies for Optical Countermeasures XIV, 104350B (5 October 2017); doi: 10.1117/12.2277590
Show Author Affiliations
Edgaras Dvinelis, Brolis Semiconductors UAB (Lithuania)
Mindaugas Greibus, Brolis Semiconductors UAB (Lithuania)
Augustinas Trinkūnas, Brolis Semiconductors UAB (Lithuania)
Greta Naujokaitė, Brolis Semiconductors UAB (Lithuania)
Augustinas Vizbaras, Brolis Semiconductors UAB (Lithuania)
Dominykas Vizbaras, Brolis Photonics Solutions Ltd. (United Kingdom)
Kristijonas Vizbaras, Brolis Semiconductors UAB (Lithuania)

Published in SPIE Proceedings Vol. 10435:
Technologies for Optical Countermeasures XIV
David H. Titterton; Robert J. Grasso; Mark A. Richardson, Editor(s)

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