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Proceedings Paper

High field bipolar magnetic field sensors based on surface acoustic wave resonators (Conference Presentation)
Author(s): Vincent Polewczyk; Karine Dumesnil; Daniel Lacour; Mohammed Moutaouekkil; Hamid Mjadeh; Nicolas Tiercelin; Sébastien Petit Watelot; Yannick Dusch; Omar Elmazria; Abdelkrim Talbi; Olivier Bou Matar; Michel Hehn

Paper Abstract

Surface acoustic wave devices (SAW) have a major interest in sensor applications due to their ease of manufacturing, their sensitivity, small size, and wireless structures. Indeed, especially in SAW resonator geometry, the sensor can be wireless addressed and measured with any embedded power. Surface Acoustic Wave sensors have been used to measure a large variety of stimuli like temperature, pressure, constrain [ref]. It is also known that the velocity or resonant frequency of SAW devices including a magnetostrictive material can be changed by applying a magnetic field. By using magnetostrictive single materials or composites with enhanced magnetoelectric coefficients, various magnetic SAW sensors have been proposed during these last ten years. However, their use to sense magnetic fields is restricted to low magnetic fields and the capability to wireless measure bipolar fields and/or high fields is lacking. Furthermore, the occurrence of hysteresis in the SAW response has not been addressed. In this paper, we report magnetic Surface Acoustic Wave (SAW) sensors that consist of interdigital transducers made of a magnetostrictive material (Ni and TbFe2) or based on exchange-biased multilayers (Co/IrMn and CoFe/IrMn). In the SAW resonator geometry, the wireless measure could be performed in a field range depending on the system studied. The intensity and sign of the applied field could be extracted. Finally, the control of the electrode magnetic properties insured reversible behavior in the SAW response.

Paper Details

Date Published: 19 September 2017
Proc. SPIE 10357, Spintronics X, 103571U (19 September 2017); doi: 10.1117/12.2275731
Show Author Affiliations
Vincent Polewczyk, Institut Jean Lamour (France)
Karine Dumesnil, Institut Jean Lamour (France)
Daniel Lacour, Institut Jean Lamour (France)
Mohammed Moutaouekkil, Institut Jean Lamour (France)
Hamid Mjadeh, Institut Jean Lamour (France)
Nicolas Tiercelin, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Sébastien Petit Watelot, Institut Jean Lamour (France)
Yannick Dusch, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Omar Elmazria, Institut Jean Lamour (France)
Abdelkrim Talbi, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Olivier Bou Matar, Institut d'Electronique de Microélectronique et de Nanotechnologie (France)
Michel Hehn, Institut Jean Lamour (France)

Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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