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Proceedings Paper

Optical modulation in silicon-vanadium dioxide photonic structures
Author(s): Kevin J. Miller; Kent A. Hallman; Richard F. Haglund; Sharon M. Weiss
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Paper Abstract

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Paper Details

Date Published: 24 August 2017
PDF: 8 pages
Proc. SPIE 10345, Active Photonic Platforms IX, 103451D (24 August 2017); doi: 10.1117/12.2274655
Show Author Affiliations
Kevin J. Miller, Vanderbilt Univ. (United States)
Kent A. Hallman, Vanderbilt Univ. (United States)
Richard F. Haglund, Vanderbilt Univ. (United States)
Sharon M. Weiss, Vanderbilt Univ. (United States)

Published in SPIE Proceedings Vol. 10345:
Active Photonic Platforms IX
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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