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Proceedings Paper

Innovative patterning method for modifying few-layer MoS2 device geometries
Author(s): Fernando Jiménez Urbanos; Andrés Black; Ramón Bernardo-Gavito; Manuel R. Osorio; Santiago Casado; Daniel Granados
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Paper Abstract

When mechanically exfoliated two-dimensional (2D) materials are used for device applications, their properties strongly depend on the geometry and number of layers present in the flake. In general, these properties cannot be modified once a device has been fabricated out of an exfoliated flake. In this work we present a novel nano-patterning method for 2D material based devices, Pulsed eBeam Gas Assisted Patterning (PEBGAP), that allows us to fine tune their geometry once the device fabrication steps have been completed.

Paper Details

Date Published: 31 August 2017
PDF: 7 pages
Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540G (31 August 2017); doi: 10.1117/12.2272702
Show Author Affiliations
Fernando Jiménez Urbanos, IMDEA Nanociencia (Spain)
Andrés Black, IMDEA Nanociencia (Spain)
Univ. Autónoma de Madrid (Spain)
Ramón Bernardo-Gavito, Lancaster Univ. (United Kingdom)
Manuel R. Osorio, IMDEA Nanociencia (Spain)
Santiago Casado, IMDEA Nanociencia (Spain)
Daniel Granados, IMDEA Nanociencia (Spain)

Published in SPIE Proceedings Vol. 10354:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIV
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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