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Proceedings Paper

Luminescence studies of laser MBE grown GaN on ZnO nanostructures
Author(s): Sheetal Dewan; Monika Tomar; Ashok K. Kapoor; R. P. Tandon; Vinay Gupta
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Paper Abstract

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

Paper Details

Date Published: 31 August 2017
PDF: 6 pages
Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103540V (31 August 2017); doi: 10.1117/12.2272549
Show Author Affiliations
Sheetal Dewan, Univ. of Delhi (India)
Monika Tomar, Univ. of Delhi (India)
Ashok K. Kapoor, Solid State Physics Lab. (India)
R. P. Tandon, Univ. of Delhi (India)
Vinay Gupta, Univ. of Delhi (India)

Published in SPIE Proceedings Vol. 10354:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIV
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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