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Proceedings Paper

Vertical organic transistors for optoelectronic and ferroelectric applications (Conference Presentation)
Author(s): Hyeonggeun Yu; Franky So

Paper Abstract

Direct integration of an infrared-sensing quantum dot film and an organic light-emitting diode (OLED) offers pixel-free infrared imaging. However, the infrared-to-visible conversion efficiencies of the devices are low due to the low photon-to-electron conversion efficiency of the quantum dot photodetector. Here, we report a novel vertical infrared phototransistor with 105 % external quantum efficiency (EQE). By integrating a phosphorescent OLED with this phototransistor, an infrared-to-visible up-conversion light-emitting phototransistor with an EQE over 1,000% is demonstrated. In addition, by employing a ferroelectric gate insulator for the vertical transistor, a flexible low voltage non-volatile memory is demonstrated with 10 years of retention extrapolated.

Paper Details

Date Published: 19 September 2017
Proc. SPIE 10364, Organic Sensors and Bioelectronics X, 103640Q (19 September 2017); doi: 10.1117/12.2272527
Show Author Affiliations
Hyeonggeun Yu, North Carolina State Univ. (United States)
Franky So, North Carolina State Univ. (United States)

Published in SPIE Proceedings Vol. 10364:
Organic Sensors and Bioelectronics X
Ioannis Kymissis; Ruth Shinar; Luisa Torsi, Editor(s)

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