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Proceedings Paper

Effect of antimony segregation on the electronic properties of InAs/InAsSb superlattices
Author(s): H. J. Haugan; F. Szmulowicz; J. J. Hudgins; L. E. Cordonnier; G. J. Brown
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Paper Abstract

There has been great progress in recent years in advancing the state-of-the-art of Ga-free InAs/InAsSb superlattice (SL) materials for infrared detector applications, spurred by the observation of long minority carrier lifetimes in this material system. However, compositional and dimensional changes through antimony (Sb) segregation alter the detector properties from those originally designed. For this reason, in this work, the authors explore epitaxial conditions that can mitigate this segregation in order to produce high-quality SL materials for optimum detector performance. A nominal SL structure of 7.7 nm InAs/3.5 nm InAs0.7 Sb0.3 tailored for an approximately six-micron response at 5 K was used to optimize the epitaxial parameters. Since the growth of mixed AsSb alloys is complicated by the potential reaction of As with Sb surfaces, the authors vary the substrate temperature (Ts) in order to control the As surface reaction on a Sb surface. Experimental results indicate that the SL sample grown at the lowest investigated Ts produces the highest Sb-mole fraction x of ~0.3 in InAs1-x Sbx layers, which then decreases by 21 % as the Ts increases from 395 to 440 °C. This reduction causes an approximately 30 meV blueshift in the position of the excitonic photoluminescence (PL) peak. This finding differs from the results obtained from the Ga-containing InAs/GaSb SL equivalents, where the PL peak position remains constant at about 220 meV, regardless of Ts. The Ga-free SLs generally generate a broader PL linewidth than the corresponding Ga-containing SLs due to the higher spatial Sb distribution at the hetero-interfaces engendered by Sb segregation. In order for this newly proposed Ga-free SL materials to be viable for detector applications, the material problem associated with Sb segregation needs to be adequately controlled and further mitigated.

Paper Details

Date Published: 30 August 2017
PDF: 10 pages
Proc. SPIE 10404, Infrared Sensors, Devices, and Applications VII, 104040W (30 August 2017); doi: 10.1117/12.2271047
Show Author Affiliations
H. J. Haugan, Air Force Research Lab. (United States)
F. Szmulowicz, Air Force Research Lab. (United States)
J. J. Hudgins, Air Force Research Lab. (United States)
L. E. Cordonnier, Air Force Research Lab. (United States)
G. J. Brown, Air Force Research Lab. (United States)

Published in SPIE Proceedings Vol. 10404:
Infrared Sensors, Devices, and Applications VII
Paul D. LeVan; Ashok K. Sood; Priyalal Wijewarnasuriya; Arvind I. D'Souza, Editor(s)

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