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Proceedings Paper

Embedded top-coat for reducing the effect out of band radiation in EUV lithography
Author(s): Ke Du; Meiliana Siauw; David Valade; Marek Jasieniak; Nico Voelcker; Peter Trefonas III; Jim Thackeray; Idriss Blakey; Andrew Whittaker
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Paper Abstract

Out of band (OOB) radiation from the EUV source has significant implications for the performance of EUVL photoresists. Here we introduce a surface-active polymer additive, capable of partitioning to the top of the resist film during casting and annealing, to protect the underlying photoresist from OOB radiation. Copolymers were prepared using reversible addition-fragmentation chain transfer (RAFT) polymerization, and rendered surface active by chain extension with a block of fluoro-monomer. Films were prepared from the EUV resist with added surface-active Embedded Barrier Layer (EBL), and characterized using measurements of contact angles and spectroscopic ellipsometry. Finally, the lithographic performance of the resist containing the EBL was evaluated using Electron Beam Lithography exposure

Paper Details

Date Published: 27 March 2017
PDF: 7 pages
Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460D (27 March 2017); doi: 10.1117/12.2270480
Show Author Affiliations
Ke Du, The Univ. of Queensland (Australia)
Meiliana Siauw, The Univ. of Queensland (Australia)
David Valade, The Univ. of Queensland (Australia)
Marek Jasieniak, Univ. of South Australia (Australia)
Nico Voelcker, Univ. of South Australia (Australia)
Peter Trefonas III, Dow Electronic Materials (United States)
Jim Thackeray, Dow Electronic Materials (United States)
Idriss Blakey, The Univ. of Queensland (Australia)
Andrew Whittaker, The Univ. of Queensland (Australia)

Published in SPIE Proceedings Vol. 10146:
Advances in Patterning Materials and Processes XXXIV
Christoph K. Hohle, Editor(s)

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