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Proceedings Paper

Very high aspect ratio through silicon via reflectometry
Author(s): J. Bauer; F. Heinrich; O. Fursenko; S. Marschmeyer; A. Bluemich; S. Pulwer; P. Steglich; C. Villringer; A. Mai; S. Schrader
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Paper Abstract

Through Silicon Via (TSV) technology is a key feature of new 3D integration of circuits by creation of interconnections using vias, which go through the silicon wafer. Typically, the highly-selective Bosch Si etch process, characterized by a high etch rate and high aspect ratio and forming of scallops on the sidewalls is used. As presented in this paper, we have developed an experimental setup and a respective evaluation algorithm for the control and monitoring of very high aspect ratio TSV profiles by spectroscopic reflectometry. For this purpose square via arrays with lateral dimension from 3 to 10 μm were fabricated by a Bosch etch process and analyzed by our setup. By exploiting interference and diffraction effects of waves reflected from the top and bottom surfaces as well as from the side walls of the TSV patterns, the measurements provided etch depths, CD values and scallop periods. The results were compared with data obtained by a commercial wafer metrology tool. Aspect ratios of up to 35:1 were safely evaluable by our setup.

Paper Details

Date Published: 26 June 2017
PDF: 8 pages
Proc. SPIE 10329, Optical Measurement Systems for Industrial Inspection X, 103293J (26 June 2017); doi: 10.1117/12.2269957
Show Author Affiliations
J. Bauer, Technische Hochschule Wildau (Germany)
F. Heinrich, Technische Hochschule Wildau (Germany)
O. Fursenko, IHP GmbH (Germany)
S. Marschmeyer, IHP GmbH (Germany)
A. Bluemich, SENTECH Instruments GmbH (Germany)
S. Pulwer, Technische Hochschule Wildau (Germany)
P. Steglich, Technische Hochschule Wildau (Germany)
C. Villringer, Technische Hochschule Wildau (Germany)
A. Mai, IHP GmbH (Germany)
S. Schrader, Technische Hochschule Wildau (Germany)

Published in SPIE Proceedings Vol. 10329:
Optical Measurement Systems for Industrial Inspection X
Peter Lehmann; Wolfgang Osten; Armando Albertazzi Gonçalves Jr., Editor(s)

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