
Proceedings Paper
AlGaInN laser diode bars for high-power, optical integration and quantum technologiesFormat | Member Price | Non-Member Price |
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Paper Abstract
GaN laser diodes fabricated from the AlGaInN material system is an emerging technology for
high power, optical integration and quantum applications. The AlGaInN material system allows
for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the
visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to
new and novel applications including displays and imaging systems, free-space and underwater
telecommunications and the latest quantum technologies such as optical atomic clocks and atom
interferometry.
Paper Details
Date Published: 11 May 2017
PDF: 8 pages
Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380W (11 May 2017); doi: 10.1117/12.2269778
Published in SPIE Proceedings Vol. 10238:
High-Power, High-Energy, and High-Intensity Laser Technology III
Joachim Hein, Editor(s)
PDF: 8 pages
Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380W (11 May 2017); doi: 10.1117/12.2269778
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
D. Schiavon, TopGaN Ltd. (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
D. Schiavon, TopGaN Ltd. (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
Published in SPIE Proceedings Vol. 10238:
High-Power, High-Energy, and High-Intensity Laser Technology III
Joachim Hein, Editor(s)
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